저압 화학 증착법으로 증착된 다결정실리콘에 As를 이온주입하여 As농도와 $25~105^{circ}C$ 범위의 측정온도에 따른 비저항의 변화를 조사하였다. 비저항이 최대가 되는 적정 As농도가 존재하였으며 이때 비저항의 온도의존성면에서 활성화에너지 값도 최대를 보였다. Passivation공정후 감소된 비저항이 $O_2$플라즈마 처리와 $N_2$ 분위기에서의 열처리에 의하여 회복되는 현상에 대하여 설명한다.
The resistivity of polycrystalline silicon film deposited by low pressure chemical vapor deposition and doped by arsenic Implantation has been investigated as a function of dopant concentration and testing temperature ranging from $25^{circ}C$ to $105^{circ}C$ . The resistivity vs. doping concentration curve had a peak point with highest activation energy with respect to the dependence of the resistivity on temperature. We showed that $O_2$ plasma anneal followed by heat-treatment in $N_2$ ambient was able to recover the resistivity degraded by the plasma deposited passivation layers.
