Maskless depositon of copper onto n-doped and p-doped Si in an aqueous copper sulfate solution is investigated. On p-doped Si substrates, microscopic $(~10mu extrm{m}$) copper spots are deposited by illuminating continuous wave $Ar^+$ laser beam of wavelength 514.5 nm. Copper deposition on n-doped Si substrates is also achieved by shinning second harmonic pulses $(pulse width~25 nsec, lambda=530 nm)$ of a passively Q-switched Nd:YAG laser. The observed deposition is attributed to the electric field resulting from the Galvanic potential of a semiconductor-electrolyte junction.