- 성형 압력변화에 따른 고온초전도체 $Y_1Ba_2Cu_3O_7-delta$
- ㆍ 저자명
- 김채옥,박정수,이교운
- ㆍ 간행물명
- 電氣電子材料學會誌= The journal of the Korean Institute of Electrical and Electronic Material Engineers
- ㆍ 권/호정보
- 1996년|9권 1호|pp.18-23 (6 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
The molding pressure is also one of the important parameters in the preparation of HTSC materials by the solid state reaction method. In the present study, changes in structural, electrical and microstructural proper-ties with the molding pressure in YiB $a_{2}$C $u_{3}$ $O_{70{delta}}$ superconductors have been performed. The investigated molding pressures were 0.5*10$^{3}$ N/c $m^{2}$, 1*10$^{3}$ N/c $m^{2}$, 2*10$^{3}$ n/c $m^{2}$ and 4*10$^{3}$ N/c $m^{2}$. As the molding pressure increased, the anisotropy of the crystal structure decreased and the grains have been grown preferentially in a c-axis direction. Since the size of the grain becomes larger with the decrease of the porosity, denser textures are formed. The results indicated that the critical current density is improved resulting from the enhanced densification due to higher molding pressure. When the molding pressure was between 1*10$^{3}$ N/c $m^{2}$ and 2*10$^{3}$ N/c $m^{2}$, while it did not affect the oxygen deficiency and Tc, the increase of the molding pressure affects remarkably on grain size and densification of the $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-{delta}}$. When the molding pressure is larger than 2*10$^{3}$ N/c $m^{2}$, electrical proper-ties are independent on the molding pressure..