The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x<l) bonds. The core level Cu 2p peak show broadening of the peaks with increasing the etching time from a pure Cu state and shake-up satellite structure with only 110% etched sample. From these results and the changes of Cu LMM auger peaks, it is found that Cu forms CuCl$_{x}$ (x<l) chlorinated compound after 90% and 95% etching, and CuCl$_{x}$ (1<x<2) after 110% etching. At the same time, aluminum shows Al-Cl and Al-F bonds while silicon show only Si-O bonds after 110% etching.ching.