RF(radio-frequency) magnetron 스퍼터링 장치에 질소가스와 아르곤가스를 동시에 주입하면서 Ti 타켓을 스퍼터링하여 $TiN_x$ 박막을 유리기판위에 제작하였다. 박막제작시 RF power supply 출력을 240W로, 증착기 내부의 온도는 $200^{circ}C$를 유지하였다. $TiN_x$ 박막은 알곤 가스를 20sccm으로 고정시킨 상태에서 질소를 3sccm부터 9sccm까지 변화시켜가며 증착시켰다. 이때 박막의 화학적 조성과 성분비를 분석하기 위하여 XPS를 사용하였다.
The $TiN_x$ thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{circ}C$. The films were obtained at nitrogen flow rates in the range 3-9 seem with a constant argon flow rate of 20 seem. For the films obtained, the chemical binding energy of the films was investigated by XPS (x-ray photoelectron spectroscopy) in order to analyze the chemical nature and composition of the films.
