The $ZnGa_2O_4$ phosphor thick films were fabricated using a screen printing method on Si(100) substrates at various sintering temperatures. The XRD patterns show that the $ZnGa_2O_4$ thick films have a (311) main peak and a spinel structure with increasing sintering temperatures. The particle sizes of $ZnGa_2O_4$ phosphor were about 100 nm and the thickness of $ZnGa_2O_4$ thick film was $10{mu}m$. The CL and PL properties of $ZnGa_2O_4$ showed main peak of 420nm and maximum intensity at the sintering temperature of $900^{circ}C$. These results indicate that $ZnGa_2O_4$ phosphor thick films hold promise for displays such as plasma display panel and field emission display.???