This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% $Al_2O_3$). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to $200^{circ}C$. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% $H_2$ addition at the growth temperature of $150^{circ}C$, resistivity of $3.21{ imes}10^{-4}{Omega}{cdot}cm$, mobility of $21.9cm^2/V-s$, electric charge carrier concentration of $9.35{ imes}10^{20}cm^{-3}$ was obtained. The AZO : H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.