- 푸리에변환 적외선분광분석법에 의한 누설전류의 발생 원인에 대한 연구
- ㆍ 저자명
- 오데레사,Oh. Teresa
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2007년|20권 6호|pp.514-519 (6 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
The surfaces of $SiO_2$ films were treated by PMMA diluted solutions, and analyzed the chemical shift from Fourier Transform Infrared Spectrometer. The $SiO_2$ film treated by PMMA diluted solution changed the properties of the surface, and showed the blue and red shift according to the concentration of PMMA. The C-H bond elongation effect due to the high electro-negative atom chlorine showed the red shift, and makes the final material with the cross-link structure. The leakage current was efficiently reduced at the sample No 7 with the red shift, witch depends on the electron deficient group.