From the progressing results, it was found that thin film using 52 wt% Ni - 38 wt% Cr - 3 wt% Al - 4 wt% Mn - 3 wt% Si target has good characteristics for low TCR (temperature coefficients of resistance) and high resistivity. The optimum sputtering condition was DC 250 W, 5 mtorr, and 50 sccm and the proper annealing condition was $350^{circ}C$/3.5 hr in air atmosphere. At these fabricated conditions, thin film resistors with TCR values of less than ${pm}10ppm/^{circ}C$ were obtained. The TCR of the packaged-samples made at proper fabrication conditions was $-3{sim}15ppm/^{circ}C$ after the thermal cycling and $-20{sim}180ppm/^{circ}C$ after PCT (pressure cooker test), we could confirm reliability for the thin film resistor and find the need for enduring research about packaging method.