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Computational and Experimental Study of Grain Growth in WC-Co and WC-VC-Co Cemented Carbides
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  • Computational and Experimental Study of Grain Growth in WC-Co and WC-VC-Co Cemented Carbides
  • Computational and Experimental Study of Grain Growth in WC-Co and WC-VC-Co Cemented Carbides
저자명
Shin. Soon-Gi
간행물명
한국재료학회지
권/호정보
2009년|19권 11호|pp.588-595 (8 pages)
발행정보
한국재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

The knowledge of grain growth of carbide particles is very important for manufacturing micrograined cemented carbides. In the present study, continuous and discontinuous grain growth in WC-Co and WC-VC-Co cemented carbides is investigated using the Monte Carlo computer simulation technique. The Ostwald ripening process (solution/re-precipitation) and the grain boundary migration process are assumed in the simulation as the grain growth mechanism. The effects of liquid phase fraction, grain boundary energy and implanted coarse grain are examined. At higher liquid phase content, mass transfer via solid/liquid interfaces plays a major role in grain growth. Growth rate of the implanted grain was higher than that of the matrix grains through solution/re-precipitation and coalescence with neighboring grains. The results of these simulations qualitatively agree with experimental ones and suggest that distribution of liquid phase and carbide particle/carbide grain boundary energy as well as contamination by coarse grain are important factors controlling discontinuous grain growth in WC-Co and WC-VC-Co cemented carbides. The contamination by coarse grains must by avoided in the manufacturing process of fine grain cemented carbides, especially with low Co.