In the modern packaging technologies highly condensed metal interconnects are typically formed by highcost processes. These methods inevitably require the precise controls of mutually dependant process parameters, which usually cause the difficulty of the change in the layout design for interconnects of chip to-chip, or chip-to-substrate. In order to overcome these problems, the unique concept and methodology of self-assembly even in micro-meter scale were developed. In this report we focus on the factors which influenced the self-formed bumps by analyzing the phenomenon experimentally. In case of RMA flux, homogenous pattern was obtained in both plain surface and cross-section surface observation. By using RA flux, the phenomena were accelerated although the self-formtion results was inhomogenous. With ussage of moderate RA flux, reaction rate of the self-formation was accelerated with homogeneous pattern.