This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to $800^{circ}C$. At annealing temperature of $600^{circ}C$, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of $800^{circ}C$ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at $200^{circ}C$.