Thin-film transistors(TFTs) with magnesium zinc tin oxide(MZTO) channel layer are fabricated by solution-process. The threshold voltage (Vth) shifted toward positive directly with increasing Mg contents in MZTO system. Because the Mg has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy ($V_O$). As a result, the Mg act as carrier suppressor and oxygen binder in the MZTO as well as a Vth controller.