Advanced process and integration for future semiconductor devices is approaching the physical limit. The new materials with low dimensional structure have recently attracted great attention due to its expandability for the future electronic devices. In order to apply the materials to future semiconductor devices, the control of carrier scattering is critical issue. That is, the carrier scattering with physical quantity in low dimensional structure significantly modulates the device characteristics. We introduce the role of defect in several future semiconductor materials and devices. The analysis of defect in the structure becomes the most important techniques. In particular, surface defect in nano structures totally controls the device characteristics. The changes imply that the metrology field is leading the future industry for semiconductor.