주제분류
자료유형
등재정보
발행기관
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Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO2 or SiO2 Trench Isolation
Nam. Hyohyun, Park. Seulki, Shin. Changhwan 대한전자공학회 Journal of semiconductor technology and science 9 Pages
대한전자공학회 Journal of semiconductor technology and science 2014, Vol.14 No.4 427-435 (9 pages)
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Analysis of Random Variations and Variation-Robust Advanced Device Structures
Nam. Hyohyun, Lee. Gyo Sub, Lee. Hyunjae, Park. In Jun, Shin. Changhwan 대한전자공학회 Journal of semiconductor technology and science 15 Pages
대한전자공학회 Journal of semiconductor technology and science 2014, Vol.14 No.1 8-22 (15 pages)


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