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Fabrication of MFISFET Compatible with CMOS Process Using $SrBi_2Ta_2O_9$(SBT) Materials
You. In-Kyu, Lee. Won-Jae, Yang. Il-Suk, Yu. Byoung-Gon, Cho. Kyoung-Ik 한국전기전자재료학회 Transactions on electrical and electronic materials 5 Pages
한국전기전자재료학회 Transactions on electrical and electronic materials 2000, Vol.1 No.1 40-44 (5 pages)
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Graphene field-effect transistor for radio-frequency applications : review
Jeong-Sun Moon 한국탄소학회 Carbon Letters 6 Pages
한국탄소학회 Carbon Letters 2012, Vol.13 No.1 2 17-22 (6 pages)
to improve as the quality of the epitaxial graphene flm, gate dielectric layer, transcon- ductance, and transistor fabrication processing improves with reduced parasitic charging delay [31]. In most RF applications, f max is very important to provide am- plifers with gain. The weak I-V saturation leads to a smaller Fig. 2. (a) Measured common-source current-voltage characteristics of 1f x 6 m... -
Antifuse Circuits and Their Applicatoins to Post-Package of DRAMs
Wee. Jae-Kyung, Kook. Jeong-Hoon, Kim. Se-Jun, Hong. Sang-Hoon, Ahn. Jin-Hong 대한전자공학회 Journal of semiconductor technology and science 16 Pages
대한전자공학회 Journal of semiconductor technology and science 2001, Vol.1 No.4 216-231 (16 pages)