This paper reports some results of Si and SiO$_{2}$ films obtained from the expitaxial growth by hydrogen reduction of SiCI$_{4}$ with a hydrogen and carbon dioxide mixture in an epitaxial-deposition chamber. The deposited Si and SiO$_{2}$ are studied by observing the process parameters affecting the rate of deposition, and the quantitative properties at the interface of Si and SiO$_{2}$ are also considered briefly according to the results of the optical absorption and the voltage-current characteristic of MOS etc. using step etching procedure for oxide films.