A new method of forming silicon p$^{+}$-n-n$^{+}$ junctions has been attempted by using the VDH-Implanter (Vacuum Discharge and Heating). Each of p$^{+}$-n and n-n$^{+}$ junctions was formed on both sides of an n-type silicon substrate by means of predeposition of each dopant and their bombarding due to rarefied air ions together with the preheating of the substrate in the implanter. The recifying principle of the p$^{+}$-n-n$^{+}$ junctions is thought to be based on the theory of double injection. The I-V characteristic of the diode has shown that it has a fairly high forward current density with the desirable rise due to vary low voltage though the reverse voltage is a little low on account of the low resistivity of the silicon substrate.n substrate.