A model analysis of pattern shift in the epitaxial growth of silicon on (111) substrates was performed. The growth rate anisotropy was considered as the most important affecting factor of pattern shift, and for the model establishment the off angle of the substrate and the process temperature were taken as the variables. We derived a theoretical equation of pattern shift by assuming the growth rate anisotropy as the trigonometric sine function of the off angle of the substrate and defining the growth rate anisotropy factor related to the process temperature. The pattern shift ratio calculated by this model had the same tendency with the experimental ones, which, however, were about twice greater than those. It was supposed that this discrepailcy was due to the second order affecting factor such as facetting and step broadening which had been exluded in model establishment.