The semiconducting ceramics having positive temperature coefficient of resistivity in he family of 0.25mol% $Sb_2O_3$ doped barium titanates were prepared with AST ($4Al_2O_3$.$9SiO_2$.$3TiO_2$) and $MnO_2$ as additives and these electrical properties were investigated. The PTCR characteristic in these ceramic materials was improved by the addition of AST and $MnO_2$ because the addition of AST decreased the room temperature resistivity and controlled grin size due to the formation of a liquid phase during sintering and the addition of $MnO_2$ improved by forming acceptor level on the intergranular layer. On dependence on the switching time as switching temperature was increased the initial power and switching time increased.