This paper introduces novel functionally integrated logic elements which are conceptuallized for large scale integrated circuits. Efforts are made to minimize the gate size as well as to reduce the operational voltage, without sacrificing the speed performance of the gates. The process used was a rather conventional collector diffusion isolation(CDI) process. New gate structures are formed by merging several transistors of a gate in the silicon substrate. Thested elements are CML(Current Mode Logic) and EECL (Emitter-to-Emitter Coupled Logic)gates. The obtained experimental results are power-delay product of 6~11pJ and delay time/gate of 1.6~1.8 ns, confirming the possibility of these novel gate structures as a VLSI-candidate.