${eta}$-SiC powders were prepared by the simultaneous reduction and carbiding of Jecheon quartzite at 1400$^{circ}C$ for 7 hours in hydrogen atmosphere, using graphite or carbon black as the reducing and carbiding reagent. The prepared SiC powder was acid-treated with the mixture of fluoric acid and hydrochloric acid at room temperature and also by heating on an alcohol lamp for one hour, respectively. The impurities were mostly eliminated and the purity of SiC became 98.5% after hot acid treatment. The specific surface area of SiC powder was also increased up to 115㎡/g by hot acid treatment. This pure and fine SiC powder was hot-pressed at 1900$^{circ}C$ for 30min, using 5wt% Al2O3 as a sintering aid. The density, M.O.R., KIC and hardness of the hot-pressed SiC ceramics were 3.195g/㎤, 48.7Kgf/$ extrm{mm}^2$, 5.4MN/㎥/2 and 2,182Kgf/$ extrm{mm}^2$, respectively.