The effects of deposition variables on SnO2 CVD were investigated for SnCl4＋O2 reaction at 300∼700$^{circ}C$, Psncl4=1${ imes}$10-5∼1${ imes}$10-3 atm, and Po2=5${ imes}$10-4∼1 atm. A thermodynamic equilibrium study on Sn-Cl-O system has been performed with the computer calculation. The calculation indicates that major species participating the reaction in SnCl4 and not intermediate species, SnCl2. Good uniformity of the film thickness was obtained at the flow rate of 11cm/sec, which resulted from the stable gas flow in our cold wall reactor. The experimental results showed that apparent activation energy of the deposition was about 13.5Kcal/mole below the temperature of 500$^{circ}C$ and the deposition mechanism was controlled by surface reation. The behavior of deposition rate on the reactant partial pressures could be explained with the Langmuri-Hinshelwood mechanism. X-ray study demonstrated that SnO2 film deposited at temperatures above 400$^{circ}C$ were polycrystalline with tetragonal rutile structure and grew with (211) and (301) preferred orientations.