Ohmic contact process for the fabrication of GaAs integrated circuits is very important. Specific contact resistivities, assuming Rsm=Rs, were measured after the rapid and the conventional alloying process, respectively. The results show that the characteristics of ohmic contact through the rapid alloying process is much better (Apc=1.3~3.3x10**-7 ulcorner-(mulcorner. This is probably due to intensive and compound energy densities during the rapid alloying process. New analysis method of TLM patterns viz. measurements of normlaized specific contact resistivities are proposed to reduce measurement errors that could occur when measuring the small contact end resistances. The adoption of rapid alloying process for the mass production of GaAs integrated circuits could greatly reduce the total processig time.