This paper describes to the unit rectangle EB direct writing lithography method using SEM. This method has the constant exposure time to any rectangle pattern. In order to change the EB current according to various rectangle size for the constant exposure time, the supply current of condenser lens in controlled by BITMAP-IV CAD system. By this method, the resizing procedure of density pattern area is not needed to pattern data conversion, and the through-put ofr exposure is increased about 172 times compared with the unit scan exposure method.