ZnWO4 single crystals were grown by Czochralski method. And the orientation of grown crystals were determined by Laue back reflection, and the crystals were siliced at (100), (010), (001) face before polishing. The morphologys and distribution of etch pits on each face were observed by optical microscopy. In the present study, we understood that dislocation distributjioon rely on shape of solid-liquid interface, and secondary phase acts on the dislocation source. We also observed dislocation trace(etch pits) of (100) slip plane on (010) cleavage plane.