Al2O3 film was chemically deposited by pyrolytic decom,positio of the Al-tri-isopropoxide/N2 system at 350$^{circ}C$, 30 and 1.86torr. FTIR analysis showed a deposited film was a hydrated alumina and transformed to an anhydrous one after heat treatment(1hr, >800$^{circ}C$ or 4hr, >500$^{circ}C$) in N2 atmosphere. This transformation influenced on the CV-hysteresis of Si-Al2O3 structure. Also, a pH sensitivity of EIS(Electrolyte-Insulator-Semiconductor)structure using Si-Al2O3/SiO2 film was 50mV/pH in the range of pH 3 to 7.