In this paper the results for thin multi-layer InGaAsP($1.3{mu}m$)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of $0.3^{circ}C$/min and the growing temperature of $630^{circ}C$ were obtained as $0.11 {mu}m$/min and $0.06 {mu}m$/min, respectively, by the uniform cooling with two phase solution technique.