Rapid Thermal Process(RTP) has been used to precisely control and study the reaction rate for the formation of refractory titanuium silicide. Samples were prepared by sputtering deposition layer of titanium on n-type, poly-deposit silicon wafers. The process were then sujected to a matrix of rapid time-temperature profile under nitrgen, argon gas ambient to precisely control the silicide formation. Reacted films were analyzed by the sheet resistance measursrement, SEM, ASR and X-ray diffraction. Results were shown that the resistivity of the silicide films are below 20u-cm and the thickness of silicide films are about two times than that of as-deposited titanium films. Silicidation ambient was likely to happen at the same tamperature-time condition for argon and nitrogen gas.