The effects of 0.15mol% Y2O3 doped semiconducting (Ba1-xPbx)TiO3 ceramics with 0.5 mol% Pb5Ge3O11 as sintering additives have been investigated as function of Pb contents (from 0.05 mol to 0.3 mol) and sintering temperatures (from 1050$^{circ}C$ to 1200$^{circ}C$). As the Pb content increases in the (Ba1-xPbx)TiO3 system, the size and resistance of the grain increase but the capacitance of the grain boundary decreases due to the formation of liquid phase during the sintering. And with increasing the sintering temperatures, the resistance of the grain decreases but the capacitance of the grain boundary increases. The PTCR effects decrease with increasing the Pb content and the sintering temperature.