A new efficient method for GaAs MESFET model parameter extraction is proposed, which is based on the bias dependance of each parameter characteristics derved from the analytic model. The requiremnts of the method are only small-signal S-parameter measurements under the three bias variations. Fixation of the linear model parameter values in the optimization process is made using the sensitivity information of the model parameter obtained by the weighted Broyden update method, it is to improve the uniqueness and reliablility of the solution. Teh validity of the extracted