In this study, the (P)SiC/(N)Si solar cell is fabricated by the vacuum evaporation method with the substrate temperature at about $200{pm}5[5^{circ}C]$ and its characteristics are investigated. The optimal thickness of $1.2[{mu}m]$ of SiC film is derived from the relation between film thickness and conversion efficiency. The characteristics of solar cells are improved by the annealing. The optimum annealing temperature and duration are $420[^{circ}C]$ and 12[min], respectively it is shown that the peak values of spectral response are shifted to the long wavelength region with increasing the annealing temperature. The X-ray diffraction patterns and the scanning electron micrographs show the grain grow thin SiC film as the annealing temperature and time is increased. The best conversion efficiency is 11.7[%] for a $2.5{ imes}1[cm^2]$ cell.