Uniform diamond films in a few $ extrm{mm}^2$ size and locally isolated diamond single crystals in size of 60 $mu extrm{m}$ were synthesized on Si-wafer and Al2O3 substrate by the method of acetylene flame. The effects of substrate temperature and flow ratio of oxygen to acetylene on the morphology of deposited diamond were investigated. According to the observations of growth behavior of diamond on Si substrate with respect to substrate surface pretreatment and flow ratio, it was shown that well faceted diamonds could grow uniformly when flow ratio was above 0.9 and substrates were densely scratched. With increasing substrates temperature, the crystal morphology changes from octahedron bounded by only {111} plane below 850$^{circ}C$ to cubo-octahedron with almost equal development of {111} and {100} plane in the temperature range of 850∼950$^{circ}C$. Between 950∼1050$^{circ}C$, the {111} faces become rough and concave. Above 1050$^{circ}C$, new crystallites begin to grow on concave {111} surface and overall morphology looks like cubo-octahedron with degenerated {111} faces. These changes of morphology can be understood in terms of the different growth mode of each crystallographic plane with respect to the substrate temperature and supersaturation. And the observed phenomena on {111} planes can be related to the face instability and twin generation.