The predominant sintering mechanisms of low firing temperature ceramic substrate which consists of borosilicate glass containing alumina as a filler are the rearrangement of alumina particles and the viscous flow of glass powders. In this system, sintering condition depends on the volume ratio of alumina to glass and on the particle size. When the substrate contains about 35 vol% alumina filler and the average alumina particle size is 4 $mu extrm{m}$, the best firing condition is obtained at the temperature range of 900∼1000$^{circ}C$. The extensive rearrangement behavior occurs at these conditions, and the optimum sintering condition is attained by smaller size of glass particles, too. The formation of cristobalite during sintering causes the difference of thermal expansion coefficient between the substrate and Si chip. This phenomenon degradates the capacity of Si chip. Therefore, the crystallization should be prevented. In the alumina filled borosilicate glass system, the crystallization does not occur. This effect may have some relation with aluminum ions in alumina. For aluminum ions diffuse into glass matrix during sintering, functiong as network former.