Barium ferrite thin films were reactively deposited with Fe and BaO composite targets by a facing tergects sputtering unit. When thermally oxidized silicon wafers were used as substrates, minimum substrate heating of $750^{circ}C$ was necessary for the perfect c-axis alignment in barium ferrite films. To lower the critical substrate temperature for the good c-axis alignment, such seed layers as ZnO, ${alpha}-Fe_{2}O_{3}$ and ${gamma}-Fe_{2}O_{3}$ were tested. The excellent c-axis algnment of BaM was obtained at a substrate temperature of $600^{circ}C$ on ZnO seed layer whose (002) plane was parallel to the substrate surface. The magnetic properties of the BaM film showed saturation magnetization of 295 emu/cc, perpendicular coercivity of 1.7 kOe and squareness of 0.75. Optimum deposition rate of $230;{AA}/min$ was obtained with the composite target and this was 5 to 20 times higher than those of other investigators with oxide targets.