Thin films of )$Pb(Zr, ;TiO_3$ are fabricated by MOCVD using ultrasonic spraying. The films having perovskite structure are made at low deposition temperature, $300-450^{circ}C$. The phase and composition of the films vary with the composition of the starting solution and the deposition temperature. Dielectric constant of the films is 187 at 1MHz. Ferroelectric hysterysis loop measurements indicate a remanant polarization of $5.5{mu}C/cm^2$, and coercive field of 65kV/cm. Resistivity of thin films is about $10^{11}{Omega}cm$ and the breakdown electric field abort 35kV/cm.