Capacitive pressure sensor for low pressure measurements has been fabricated by using $n^{+}$ epitaxial layer electrochemical etching stop and glass-to-silicon electrostatic bonding technique. The sensor had hybrid configuration of a sensor chip, which consists of sensor capacitor and reference capacitor, and two output signal detection IC chips. A fabricated sensor, with a $1.0{ imes}1.0 mm^{2}$ square size and a $10{mu}m$ thick flat diaphragm, showed a 7.1 pF zero pressure capacitance, and 5.2 % F.S, sensitivity in 10 KPa pressure range. By using a capacitance to voltage converter, the thermal zero shift of 0.051 %F.S./$^{circ}C$ and the thermal sensitivity shift of 0.12 %F.S./$^{circ}C$ for temperature range of $5{sim}45^{circ}C$ were obtained.