The boron-doped polycrystalline silicon films which can be used in pressure sensors were fabricated in a high-vacuum resistance heating evaporator. Poly-Si films were deposited on quartz substrates at various temperatures and the boron was doped to the silicon film in a diffusion furnace using BN wafer. The silicon films deposited at $500^{circ}C$ was amorphous, began to show crystalline at $600^{circ}C$, and became polycrystalline at $700^{circ}C$. After doping boron at $900^{circ}C$for 10 minutes, the resistivity of the films was in the range of $0.1{Omega}cm~1.5{Omega}cm$, the boron density was $9.4 imes10^{15}~2.1 imes{10}^{17}cm^{-3}$, and the grain size was $107{AA}~191{AA}$.