TO:F($SnO_{2}:F$) thin films were prepared by RF magnetron sputtering system. The dependence of their structural, electrical, and optical properties on deposition conditions such as substrate temperature, working pressure and power was studied. The optimum conditions of TO:F thin film are $SnF_{2}$ content of 15wt.% in target, RF power of 150W, substrate temperature of $150^{circ}C$ and working pressure of 2mmTr. The resistivity and transmittance at 550nm in visible spectrum of the TO:F film deposited at optimum condition are $9{ imes}10^{-4}{Omega}{cdot}cm$ and above 85%, respectively. For the films deposited from the target without $SnF_{2}$ and with 15wt.% $SnF_{2}$, the optical bandgaps calculated from the transmittance curves are 3.84 and 3.9eV, respectively. X-ray diffraction patterns showed that TO and TO:F films had tetragonal rutile structure with (101), (200) direction.