We designed and fabricated a $2{ imes}4$ symmetric self electro-optic effect device array using GaAs/ AIo.04 G<lt)~s extremely shallow quantum wells grown by a molecular beam epitaxy. By employing ESQW and asymmetric Fabry-Perot cavity structure simultaneously, we improved the performances of S-SEED such as on/off contrast ratio (CR), reflectivity change ($DeltaR$), and optical bistability loop width ($Delta$). The average values of the elements of the $2{ imes}4$ S-SEED array were CR~13.1, R~24%, and $Delta$~91%. It was found that the AFP cavity structure enhances the self-biased optical bistability in ESQW-SEED under no external bias. That is due to the decreased intrisic region thickness in AFP-SEED structures, and which increases the built-in electric fields. The zero-biased S-SEED showed CR of ~4.7, R~9%, and $Delta$~22%.X>~22%.