The growth condition of highly oriented textured diamond film on a (100) Si substrate was investigated as a function of texture orientation. The growth process consisted of biased enhanced nucleation (BEN) and texture growth. The substrate was under the plasma of 6% CH4-94% H2 with negative bias of 200V during the BEN which grounded during the texture growth. The texture orintation changed from <100> to <110> by increasing substrate temperature. The nearly perfect match between textured diamond grains and the Si substrate could be obtained under the condition of <100> texture. The degree of tilt mismatch increased with the increase of deviation of texture orientation from <100>. The degree of twist mismatch appeared to increase abruptly beyond the critical deviation of texture orientation from <100> because the nuclei having the same orientation as the substrate were no more preferred grains for texture formation.