- 반응소결에 의하여 제조된 $SiC/MoSi_2$ 복합체의 산화 거동
- ㆍ 저자명
- 양준환,한인섭,우상국,서동수
- ㆍ 간행물명
- 요업학회지
- ㆍ 권/호정보
- 1994년|31권 12호|pp.1588-1598 (11 pages)
- ㆍ 발행정보
- 한국세라믹학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
The SiC/MoSi2 composite materials were fabricated by infiltrating the mixture of molybdenum disilicide and metal silicon(MoSi2+Si=100) to a porous compact of silicon carbide and graphite under the vacuum atmosphere of 10-1 torr. The specimen were oxidized in dry air under 1 atm at 130$0^{circ}C$~150$0^{circ}C$ for 240 hours. The oxidation behavior was evaluated by the weight gain and loss per unit area of the oxidized samples. Also, SEM and XRD analysis of the oxidized surface of the samples were carried out. With increasing the MoSi2 content and oxidation temperature, the passive oxidation was found. The trend of weight gain of all samples was followed the parabolic rate law with the formation of a protective layer of cristobalite on the surface.