Indium, element of group III, was refined by using zone refining for high purity refinement. We have found the impurities of T1, Zn, Fe, Cd, Pb, Ni, Cu, Sn in the refined indium with ICP-AES, so that 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.7 ppm, 2.8 weight ppm of Cd was reduced to 2.5 ppm and 14.0 weight ppm of Sn was reduced to 6.7 ppm with 5 melten zone passes only. 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.3 ppm, 2.8 weight ppm of Cd was reduced to less than 1.0 ppm and 14.0 weight ppm of Sn was reduced to 0.4 ppm after vacuum baking with 5 melten zone passes. The surface morpholgy of metal Indium thin film in each conditions showed that porosities were reduced in the front of sampled ingot after vacuum baking with 5 zone melten zone passes. The average electrical resistivity of Indium thin film was reduced from 1.4*10$^{-3}$ .ohm.-cm in Indium origin ingot to 7.9*10$^{-6}$ .ohm.-cm after zone refined with 5 melten zone passes.