Chemical vapor deposition using titanium tetra isopropoxide(TTIP) was employed to investigate effects of process parameters on the uniformity of $TiO_{2}$this films deposited on Indium Tin Oxide (ITO)coated glass. Deposition experiments were carried out at temperatures ranging from $300^{circ}C$ to $400^{circ}C$ under the pressure of 0.5~2 torrin a cold wall reactor which can handle 200mm substrate. It was found that the growth rate of $TiO_{2}$was closely related to the reaction temperature and the ractant gas compositions. Apparent activation energy for the deposition rate was 62.7lkJ/mol in the absence of $O_{2}$ and 100.4kj/mol in the presence of $O_{2}$, respectively. Homogeneous reactions in the gas phase were promoted when the total pressure of the reactor was increased. Variance in the film thickness was less than a few percent, but at high deposition rates film thickness was less uniform. Effects of reaction temperature on $TiO_{2}$ thin film characteristic was investigated with SEM, XRD and AES.