The PMMA/Ge/AZ trilayer resist decreased proximity effect of backscattering electrons and corrected pattern distoration in order to from deep submicron patterns. In the experiment, the prosiemity effect is decreased by 11% and 30% for the case of 0.9$mu$m and 1.7$mu$m AZ, respectively, in trilayer resist compared to monolyer resist. also, the EID of 240$AA$ Ge film is smaller than that of 500$AA$ film by 365. 0.1$mu$m line/space was formed in the 2000$AA$ PMMA layer with the condition of dose 330${mu}C/cm^{2}$ and of 150sec of develop time in MIBK : IPA (1:3) developer.