The DDS((CH3)2SiCl2)＋H2 gas mixture, where C atoms exist in excess in the molecules, was used for chemical vapor deposition of SiC in order to prevent codeposition of free Si in MTS(Ch3SiCl3)＋H2 system. The deposition rate was more rapid than MTS, however differ from that of MTS, it decreased after shwoing a maximum at 140$0^{circ}C$. The stoichiometry was highly improved by using the DDS as a precursor, although there exist a little pyrolytic C at 150$0^{circ}C$. The preferred orientation was (220) in MTS, however, it changed to (111) in DDS. The microstructure of the layer deposited at lower temperature were dense, however it grew coarse with the increase in the temperature.