Microstructure and ferroelectric properties of sol-gel derived PZT(52/48) and PT interlayered PZT(52/48) thin films on Pt/Ti/SiO2/Si substrates were investigated. Films were fabricated using Acetylacetone chelated PT and PZT(52/48) sols. PZT(52/48) thin films annealed at $700^{circ}C$ for 20 min showed the rosette structure with the size of 1.2~1.6${mu}{ extrm}{m}$ and the pyrochlore phse was contained. PT interlayered PZT thin films, which is inserted by PbTiO3 thin layer with the thickness of 130 $AA$ between PZT thin film and electrode, consisted of a single perovskite phase after annealing above 55$0^{circ}C$. They exhibited the uniform and columnar grains of 0.1~0.16${mu}{ extrm}{m}$, which are applicable for microelectronic device including non-volatile memory. Typical P-E hysteresis loops could be obtained from PT interlayered PZT thin film at as low as the annealing temperature of 50$0^{circ}C$. Ferroelectric properties of PT interlayered PZT thin films were improved as increasing annealing temperature up to $700^{circ}C$, and then deteriorated at 75$0^{circ}C$. PZT(52/48) and PT interlayered PZT(52/48) thin film annealed at $700^{circ}C$ for 20 min displayed Ps=38.8$mu$C/$ extrm{cm}^2$, Pr=10.0$mu$C/$ extrm{cm}^2$, Ec=65.3 kV/cm and Ps=28.5$mu$C/$ extrm{cm}^2$, Pr=9.8$mu$C/$ extrm{cm}^2$, Ec=76.1 kV/cm, respectively.