The effect of small addition of Nb on the electrical resistivity and Hall coefficient of the amorphous $Fe_{83}Zr_{7}B_{10}$ alloy and annealed ones below the crystallization temperature were investigated, which has been considered to be suitable for high frequency core material. At room temperature, their resistivities $ ho$ and the spontaneous Hall coefficients $R_{s}$ are $~1.6;{mu}{Omega}m$ and $~3{ imes}10^{-8}m^{3}/As$, respectively. $R_{s}$ and $ ho$ are decreased with increasing temperature from 100 K to room temperature. Side-jump effect was adopted to analyze the effect of the small variation of concentration and annealing. The quantity of $R_{s}/{ ho}^{2}$ at room temperature, which is directly related to the electronic structure of the mother alloy, remained almost a constant except as quenched one as it can be predicted from the side-jump effect. We suggested the temperature dependence of $R_{s}/{ ho}^{2}$ can be compared to Ms{T}.