The spray-sintering process and thermal evaporation technique were appliced to fabrication of polycrystalline CdS(Se) films on glass substrate respectively. Their atomic structure and surface morphology were analyzed by XRD and SEM spectrometers. It was found that films made in spraysintering process were of the zince-blende structure but the films evaporated in vacuum showed a two-dimensional layer structure of atom stacked along c axis with a lattice parameter of $3.351{AA}$. A variation of the conductivity with annealing temperature in air and nitrogen for sintered films with impurities has been ascribed to the mobility and the concentration of majority carrier. A increase of the electric conductance with temperature in any ambience for evaporated films was resulted from forming a conductive layer which promoted the mobilization of eletron or hole. The absorption and desorption of oxygen in subsequent annealing process has alos been discussed.