We have fabricated ICP sputter cleaning system for the contact cleaning and demonstrated a low-temperature (~15$0^{circ}C$) cleaning technique for removing native oxide on the Si wafer using $H_2$/Ar inductively coupled plasma at low bias voltages (${leqq}$-100${leqq}$). An 13.56 MHz was used to induce the inductively coupled plasma and high density plasmas could be obtained by using 3.5-turn spiral planar coil as an induction coil. The dependence of the Si$O_2$ etch rate on substrate temperature and self-bias voltage has been investigated. The substrate temperature was varied between room temperatrue(3$0^{circ}C$) and 15$0^{circ}C$, and a self-bias voltage between -20 and -100V was applied. Also, we have investigated the ion-induced damage subjected on the silicon wafers during the cleaning. The reverse saturation currents of Schottky diodes were evaluated as a measure of ion-induced damage. The high etch rate of Si$O_2$ could be obtained at low temperature (~15$0^{circ}C$) and low self-bias voltages(-40V~60V) without creating ion-induced damage using $H_2$/Ar ICP. We believe that the $H_2$/Ar sputter cleaning is due to the chemical reation between silicon and hydrogen at the Si$O_2$ surface in addition to the sputtering errects of argon ions.